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Fuji Discrete Package IGBT n Features
* Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Minimized Internal Stray Inductance
n Outline Drawing
n Applications
* High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply
n Maximum Ratings and Characteristics
* Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25C) Symbols VCES VGES DC Tc= 25C IC 25 Collector Current DC Tc=100C IC 100 1ms Tc= 25C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque
n Equivalent Circuit
Ratings 600 20 38 20 152 145 75 +150 -40 +150 50
Units V V A W W C C Nm
* Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance
( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE= 20V VGE=20V IC=20mA VGE=15V IC=20A VGE=0V VCE=10V f=1MHz VCC=300V IC=20A VGE=15V RG=120 VCC=300V IC=20A VGE=+15V RG=12 IF=20A VGE=0V IF=20A, VGE=-10V, di/dt=100A/s Min. Typ. Max. 1.0 20 8.5 3.0 Units mA A V pF 1.2 0.6 1.0 0.35 0.16 0.11 0.30 0.35 3.0 300
5.5 1300 300 70
Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
s
s V ns
* Thermal Characteristics
Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. Max. 0.86 1.66 Units C/W
Collector Current vs. Collector-Emitter Voltage 60 T j= 2 5 C 60 12V 50
Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 C
V GE = 2 0 V , 1 5 V 50
V GE = 2 0 V , 1 5 V
[A]
40
[A]
12V 40
C
Collector Current : I
30 10V 20
Collector Current : I
C
30 10V 20
10 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V]
10 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V]
Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 C 12
Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 C
[V]
10
[V]
CE
10
CE
Collector-Emitter Voltage : V
6
Collector-Emitter Voltage : V
8
8
6
4
IC = 40A
4
IC = 40A 20A
2
20A 10A
2 10A 0
0
0 5 10 15 20 25
0
5
10
15
20
25
Gate-Emitter Voltage : V GE [V]
Gate-Emitter Voltage : V GE [V]
Switching Time vs. Collector Current V CC = 3 0 0 V , R G = 1 2 , V GE= 1 5 V , T j= 2 5 C 1000 1000
Switching Time vs. Collector Current V CC = 3 0 0 V , R G = 1 2 , V GE = 1 5 V , T j= 1 2 5 C
t off
, t r, t off , t f [nsec]
, t r, t off , t f [nsec]
t off t on 100 tf
tf
t on 100 tr
Switching Time : t
on
tr
10 0 10 20 30
Switching Time : t
10 0
on
10
20
30
Collector Current : I C [A]
Collector Current : I C [A]
Switching Time vs. R G V CC =300V, I C = 2 0 A , V GE = 1 5 V , T j= 2 5 C
Switching Time vs. R G V CC =300V, I C = 2 0 A , V GE = 1 5 V , T j= 1 2 5 C
, t r, t off , t f [nsec]
, t r, t off , t f [nsec]
1000 t on t off tr tf 100
1000
t off t on tf tr
on
Switching Time : t
Switching Time : t
on
100
10 0 100 Gate Resistance : R G [ ]
10 0 100 Gate Resistance : R G [ ]
Capacitance vs. Collector-Emitter Voltage T j= 2 5 C 500
Dynamic Input Characteristics T j= 2 5 C 25
[V]
, C res , C ies [pF]
CE
1000
Collector-Emitter Voltage : V
300
15
C oes 100
200
10
C res
100
5
10
0 0 5 10 15 20 25 30 35 0 20 40 60 Gate Charge : QG 80 100 [nQ]
0 120
Reverse Recovery Time vs. Forward Current V R= 2 0 0 V ,
-di
Reverse Recovery Current vs. Forward Current V R= 2 0 0 V ,
-di
200
/ dt= 1 0 0 A / s e c
8
/ dt = 1 0 0 A / s e c
[nsec]
[A]
150
rr
Reverse Recovery Time : t
100 25C
Reverse Recovery Current : I
rr
125C
125C 6
4 25C
50
2
0 0 5 10 15 20 25 30 35
0 0 5 10 15 20 25 30 35
Forward Current : I F [A]
Forward Current : I F [A]
Gate-Emitter Voltage : V
Capacitance : C
oes
GE
[V]
C ies
400
V C C =200V, 300V, 400V
20
Reverse Biased Safe Operating Area + V GE = 1 5 V , - V GE < 15V, T j<125C, R G >1 2 50 300
Typical Short Circuit Capability V CC = 4 0 0 V , R G = 1 2 , T j= 1 2 5 C 60 I SC 250
[A]
40
t SC
50
[A]
SC
C
150
30
20
100
20
10
50
10
0 0 100 200 300 400 500 600 700
0 5 10 15 20 [V] Gate Voltage : V GE Collector-Emitter Voltage : V CE [V]
0 25
Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 60 T j= 1 2 5 C , 2 5 C 350 I F = 2 0 A , T j= 1 2 5 C
-di
/ dt 14
I rr
[nsec]
50
300
12
[A]
Forward Current : I
200
8
30
150
6
20
100 t rr 50
4
10
2
0 0 1 2 3 4 5
0 0 100 200
-di
300 / dt
400
500
0 600
Forward Voltage : V F [V]
[A/sec]
Transient Thermal Resistance
Thermal Resistance : Rth(j-c) [C/W]
10
1
FWD 10
0
IGBT
10
-1
10 -4 10
-2
10
-3
10
-2
10
-1
10
0
Pulse Width : P W [sec]
Reverse Recovery Current : I
40
Reverse Recovery Time : t
F
rr
250
10
rr
[A]
Short Circuit Time : t
30
Short Circuit Current : I
Collector Current : I
SC
200
40
[s]
Switching losses
(Eon, Eoff vs. IC)
IC [A]
Test Circuit
Switching waveforms
P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 381-9991 (fax) P.O. Box 702708 - Dallas, TX - (972) 733-1700 - (972) 233-0481 www.collmer.com

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